Next Generation SiC GaN 3-Phase Variable Speed Drive Systems

Next Generation SiC GaN 3-Phase Variable Speed Drive Systems

di Serena Finco -
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Dears Phs students, 

please see here attached some useful info for the seminar that will take place the June 17th.

 Next Generation SiC GaN 3-Phase Variable Speed Drive Systems

 


Docente: Dr. Jonas Huber – ETH Zurich

Date: June 17th 2025

 Timing: 09.00 – 14.00

 Room: VM10

 Language: English

 CFU: 1 CFU for PhD students enrolled in the XXXVIII and XXXIX Cycles

 Abstract

Variable speed drive (VSD) systems should feature high power density and low installation costs, offer wide input and/or output voltage/motor speed ranges, and ensure low EMI without requiring shielded motor cables. Accordingly, next-generation high-switching speed / high-switching-frequency SiC/GaN PWM inverters should integrate dv/dt or LC output filters to prevent conducted or radiated EMI, reflections on long motor cables, high-frequency motor losses, motor insulation stresses, and bearing currents. Moreover, buck-boost capability should preferably be implemented. This seminar reviews state-of-the-art filter concepts and multi-level inverter topologies and describes new three-phase buck-boost PWM inverter systems and modulation/control concepts currently under research at ETH Zurich, which are partly based on monolithic bidirectional GaN power transistors. Finally, voltage and current dc-link ac-ac converter systems are comparatively evaluated, and advantageous application areas for both system types are identified.